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Sumitomo, Sony tackle technical barriers to high output power GaN laser diode | IT Eco Map & News Navigator
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Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering
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Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells | HTML
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Semiconductor Today features "Semi-polar indium gallium nitride laser diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and Mathematical Sciences and Engineering
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PDF] Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections
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On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing: Journal of Vacuum Science & Technology B: Vol 34, No 4
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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide
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Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar
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a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram
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